DB HiTek's SJ MOSFET platform enables MOSFET design optimized for varying products based on flexible design support. Based on DB HiTek's original multi-layer epitaxy (EPI) growth technology, it also provides the world's best (Rdson X Qg) feature and stable quality management system. Furthermore, it provides options of low EMI noise, fast switching, and fast recovery diode (FRD) suitable for varying high-voltage applications such as power supply unit, LED driver, PV inverter, adapter, OBC (On-Board Charger) and charging piles with voltage between 500V ~ 800V.
DB HiTek continuously develops next-generation SJ MOSFET platform by giving added value to the existing products to enhance product competitiveness and provide higher values for the customers.
SJ MOSFET
- Excellent balance in electrical performance (las, switching loss and EMI)
- Suitable for a wide variety of applications and power ranges
- Variable integrated Rg
- Low Qg Poly shrink and Poly Cut Gate architecture
- Built-in Zener Diode for ESD protection (ESD ≥ 2.0kV)